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Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 530-533
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Characterization of silicon carbide thin films prepared by VHF-PECVD technology
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL DEFECTS;
CRYSTAL MICROSTRUCTURE;
DISSOCIATION;
ELECTRONS;
ELLIPSOMETRY;
HYDROGENATION;
MIXTURES;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SPECTROSCOPIC ANALYSIS;
THIN FILMS;
EXCITATION FREQUENCIES;
GAS MIXTURES;
RADIO FREQUENCY;
SPECTROSCOPIC ELLIPSOMETRY (SE);
SILICON CARBIDE;
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EID: 2942528965
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2004.03.035 Document Type: Conference Paper |
Times cited : (22)
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References (8)
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