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Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 530-533

Characterization of silicon carbide thin films prepared by VHF-PECVD technology

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; DISSOCIATION; ELECTRONS; ELLIPSOMETRY; HYDROGENATION; MIXTURES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SPECTROSCOPIC ANALYSIS; THIN FILMS;

EID: 2942528965     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.03.035     Document Type: Conference Paper
Times cited : (22)

References (8)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.