Hydrogenated silicon carbon nitride films obtained by HWCVD, PA-HWCVD and PECVD techniques

Journal of Non-Crystalline Solids

Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1361-1366

  Ferreira, I ^a   Fortunato, E ^a   Vilarinho, P ^b   Viana, A S ^c   Ramos, A R ^d   Alves, E ^d   Martins, R ^a  

^a Center of Excellence in Microelectronics Optoelectronics and Processes   (Portugal)

^b UNIVERSITY OF AVEIRO   (Portugal)

^c UNIVERSITY OF LISBON   (Portugal)

^d INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

Amorphous semiconductors; Composition; Films and coatings; FTIR measurements; Nitrogen containing glass

Indexed keywords

ALLOYING ELEMENTS; CATALYSTS; ETCHING; FILM GROWTH; HYDROGENATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON ALLOYS;

AMORPHOUS SEMICONDUCTORS; FILMS AND COATINGS; FTIR MEASUREMENTS; NITROGEN-CONTAINING GLASS;

THIN FILMS;

EID: 33745494849     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2006.02.025     Document Type: Article

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