Formation of microcrystalline germanium (μc-Ge:H) films from inductively coupled plasma CVD

Applied Surface Science

Volumn 244, Issue 1-4, 2005, Pages 12-15

  Okamoto, Y ^a   Makihara, K ^a   Higashi, S ^a   Miyazaki, S ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Crystallinity; High rate deposition; ICP; c Ge

Indexed keywords

ANTENNAS; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; CRYSTALLIZATION; DEPOSITION; INDUCTIVELY COUPLED PLASMA; SEMICONDUCTING GERMANIUM COMPOUNDS; THIN FILMS;

CRYSTALLINITY; FLOW RATE; HIGH RATE DEPOSITION; ΜC-GE;

FILM GROWTH;

EID: 15844411915     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.10.060     Document Type: Conference Paper

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