Open volumes in SiN films for strained Si transistors probed using monoenergetic positron beams

Applied Physics Letters

Volumn 88, Issue 25, 2006, Pages

  Uedono, A ^a   Ikeuchi, K ^a   Otsuka, T ^a   Ito, K ^a   Yamabe, K ^a   Kohno, M ^b   Moriya, T ^b   Okumura, N ^b   Nakanishi, T ^b   Arikado, T ^b   Ohdaira, T ^c   Suzuki, R ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TOKYO ELECTRON LTD   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POSITRONS; SILICON NITRIDE; TRANSISTORS;

MEAN SIZE; MONOENERGETIC POSITRON BEAMS; OPEN VOLUMES; POSITRONIUM;

THIN FILMS;

EID: 33745458692     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2216901     Document Type: Article

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