Preparation of dense Ta 2O 5-based ceramics by a coated powder method for enhanced dielectric properties

Journal of the American Ceramic Society

Volumn 89, Issue 7, 2006, Pages 2089-2095

  Brennecka, Geoff L ^a   Payne, David A ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL HOMOGENIZATION; COATED POWDERS; MIXED OXIDE PROCESSING; SINTERING TEMPERATURE;

DENSIFICATION; DIELECTRIC PROPERTIES; HEAT TREATMENT; PERMITTIVITY; PHASE TRANSITIONS; POWDERS; SINTERING; TANTALUM COMPOUNDS;

CERAMIC MATERIALS;

EID: 33745321176     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2006.01063.x     Document Type: Article

References (28)

1. J. F. Scott, "High-Dielectric Constant Thin Films for Dynamic Random Access Memories (DRAM)," Annu. Rev. Mater. Sci., 28, 79-100 (1998).
2. 5 Thin Films," J. Electroceram., 10, 209-14 (2003).
3. H. Fujikawa and Y. Taga, "Effects of Additive Elements on Electrical Properties of Tantalum Oxide Films," J. Appl. Phys., 75 [5] 2538-44 (1994).
4. 2," Nature, 377, 215 (1995).
5. 5 Dielectric Thin Films," Solid-State Electron., 43, 1095-9 (1999).
6. x Dielectric Thin Films Using Sol-Gel Processing With Xenon Excimer Lamps," Appl. Surf. Sci., 168, 13-6 (2000).
7. x Thin Films," J. Vacuum Sci. Technol. B - Microelectron. Nanometer Struct., 20 [3] 855-61 (2002).
8. 0.08 Ceramics," Mater. Lett., 57, 270-4 (2002).
9. x Polycrystalline Ceramics," Mater. Sci. Eng. B, 99, 221-5 (2003).
10. 5," J. Am. Chem. Soc., 78, 4514-20 (1956).
11. S. P. Garg, N. Krishnamurthy, A. Awasthi, and M. Venkatraman, "The O-Ta (Oxygen-Tantalum) System," J. Phase Equilibria, 17 [1] 63-77 (1996).
12. 5," Schweiz. Mineral. Petrogr. Mitt., 45 [1] 35-101 (1965).
13. 2)," J. Res. Natl. Bureau Standards, 72A [2] 175-86 (1968).
14. R. S. Roth and J. L. Waring, "Effect of Oxide Additions on the Polymorphism of Tantalum Pentoxide. III. "Stabilization" of the Low Temperature Structure Type," J. Res. Nail. Bureau Standards, 74A [4] 485-93 (1970).
15. 5," Acta Crystallogr., Sect. B: Struct. Crystallogr. Crystal Chem., 27, 1037-44 (1971).
16. 5 and Related Structures," J. Solid State Chem., 160, 62 (2001).
17. 5: A Study by XRPD and HRTEM Methods," J. Solid State Chem., 176 [1] 250-8 "(2003).
18. 5," Crystallogr. Rep., 47 [3] 415-9 (2002).
19. R. S. Roth and J. L. Waring, "Effect of Oxide Additions on the Polymorphism of Tantalum Pentoxide. II. "Stabilization" of the High Temperature Structure Type," J. Res. Natl. Bureau Standards, 74A [4] 477-84 (1970).
20. 2," Z. Anorg. Allg. Chem., 463, 32-44 (1980).
21. 5," Helvetica Phys. Acta, 37, 617 (1964).
22. 5," J. Solid State Chem., 1, 425-44 (1970).
23. 5," J. Solid State Chem., 3 [2] 145-53 (1971).
24. A. S. Pavlovic, "Some Dielectric Properties of Tantalum Pentoxide," J. Chem. Phys., 40 [4] 951-6 (1964).
25. 2 Laser Irradiation," Appl. Phys. Lett., 85 [9] 1577-9 (2004).
26. 5," Ceram. Int., 18 [4] 263-9 (1992).
27. S. Wu, H. M. Chan, and M. P. Harmer, "Effect of Alumina Additions on Microstructural Aspects of the β to α Transformation in Tantalum (V) Oxide," J. Am. Ceram. Soc., 88 [9] 2369-73 (2005).
28. 2 Substitution," J. Solid State Chem., (2005), in press.