Strain-stabilized solid phase epitaxy of Si-Ge on Si

Journal of Applied Physics

Volumn 99, Issue 11, 2006, Pages

  Sage, Jennifer F ^a   Barvosa Carter, William ^a,b   Aziz, Michael J ^a  

^a HARVARD UNIVERSITY   (United States)

^b Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITIONAL STRESS; SEMICONDUCTOR ALLOYS; SOLID PHASE EPITAXY; SUPERPOSITION;

COMPOSITION; CONCENTRATION (PROCESS); EPITAXIAL GROWTH; GERMANIUM; SILICON ALLOYS; STRESS ANALYSIS; TENSILE STRESS;

SEMICONDUCTING SILICON;

EID: 33745283596     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2200448     Document Type: Article

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