Correlation between Si-SiO2 heterojunction and Fowler-Nordheim conduction mechanism after soft breakdown in ultrathin oxides

Solid State Communications

Volumn 139, Issue 1, 2006, Pages 23-26

  Tan, Changhua ^a   Xu, Mingzhen ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

A. Insulator; A. Semiconductor; D. Electron states

Indexed keywords

DEFECTS; ELECTRIC INSULATORS; MATHEMATICAL MODELS; OXIDES; SEMICONDUCTOR MATERIALS; SILICA;

FOWLER-NORDHEIM CONDUCTION; FOWLER-NORDHEIM TUNNELING; GATE OXIDES;

HETEROJUNCTIONS;

EID: 33745242825     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2006.05.008     Document Type: Article

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