Robust ultrathin oxynitride with high nitrogen diffusion barrier near its surface formed by NH3 nitridation of chemical oxide and reoxidation with O2

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 6 A, 2006, Pages 4898-4902

  Lai, Chiung Hui ^a,b   Lin, Bo Chun ^c   Chang, Kow Ming ^a   Hsieh, Kuang Yeu ^d   Lai, Yi Lung ^e  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHUNG CHOU INSTITUTE OF TECHNOLOGY   (Taiwan)

^c TECHNOLOGY AND SCIENCE INSTITUTE OF NORTHERN TAIWAN   (Taiwan)

^d MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^e NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Boron penetration; Chemical oxide; Nitridation; Oxynitride; Ultrathin

Indexed keywords

BORON; DIFFUSION; NITROGEN; OXIDES; OXYGEN; ULSI CIRCUITS;

BORON PENETRATION; CHEMICAL OXIDE; OXYNITRIDE; ULTRATHIN;

NITRIDES;

EID: 33745238924     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.4898     Document Type: Article

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