Theoretical properties of the N vacancy in p -type GaN(Mg,H) at elevated temperatures

Journal of Applied Physics

Volumn 99, Issue 11, 2006, Pages

  Myers, S M ^a   Wright, A F ^a   Sanati, M ^b   Estreicher, S K ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b TEXAS TECH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MG ACCEPTORS; MG DOPANT; N VACANCY;

NUCLEAR ENERGY; PHONONS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR DOPING; THERMODYNAMICS;

GALLIUM NITRIDE;

EID: 33745237648     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2195894     Document Type: Article

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