AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC

IEEE Photonics Technology Letters

Volumn 18, Issue 12, 2006, Pages 1353-1355

  Jiang, Hao ^a   Egawa, T ^a   Ishikawa, H ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AlGaN; Dark current; Responsivity; Schottky photodiode; Solar blind

Indexed keywords

CURRENT DENSITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

DARK CURRENT; REVERSE BIAS; SCHOTTY PHOTODIODE; SOLAR BLIND;

PHOTODIODES;

EID: 33745174483     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.877351     Document Type: Article

References (12)

1. M. Razeghi and A. Rogalski, "Semiconductor ultraviolet detectors," J. Appl. Phys., vol. 79, pp. 7433-7473, 1996.
2. 1-xN p-i-n Photodiodes," Phys. Stat. Sol. A, vol. 188, pp. 283-287, 2001.
3. E. Muñoz, E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart, "III nitrides and UV detection," J. Phys.: Cond. Matter, vol. 13, pp. 7115-7137, 2001.
4. C. Pernot, A. Hirano, M. Iwaya, T. Detchprohm, H. Amano, and I. Akasaki, "Solar-blind UV photodetectors based on GaN/AlGaN p-i-n photodiodes," Jpn. J. Appl. Phys., vol. 39, pp. L387-L389, 2000.
5. 1-xN heterojunction p-i-n photodiodes," Electron. Lett., vol. 38, pp. 824-826, 2002.
6. N. Biyikli, O. Aytur, I. Kimukin, T. Tut, and E. Ozbay, "Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity," Appl. Phys. Lett., vol. 81, pp. 3272-3274, 2002.
7. J. D. Brown, J. Matthews, S. Harney, J. C. Boney, J. F. Schetzina, J. D. Benson, K. V. Dang, T. Nohava, W. Yang, and S. Krishnankutty, "High-sensitivity visible-blind AlGaN photodiodes and photodiode arrays," MRS Internet J. Nitride Semicond. Res., vol. 5S1, p. W1.9, 2000.
8. J. T. Torvik, J. I. Pankove, S. Nakamura, I. Grzegory, and S. Porowski, "The effect of threading dislocations, Mg doping, and etching on the spectral responsivity in GaN-based ultraviolet detectors," J. Appl. Phys., vol. 86, pp. 4588-4593, 1999.
9. G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, and U. K. Mishra, "High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN," Appl. Phys. Lett., vol. 75, pp. 247-249, 1999.
10. B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, and J. S. Speck, "Role of threading dislocation structure on the X-ray diffraction peak widths in epitaxial GaN films," Appl. Phys. Lett., vol. 68, pp. 643-3274, 1996.
11. 1-xN p-i-n photodiodes," Appl. Phys. Lett., vol. 77, pp. 2810-2812, 2000.
12. N. Biyikli, I. Kimukin, O. Aytur, and E. Ozbay, "Solar-blind AlGaN-based p-i-n photodiodes with low dark current and high detectivity," IEEE Photon. Technol. Lett., vol. 16, no. 7, pp. 1718-1720, Jul. 2004.