Effective improvement on barrier capability of chemical vapor deposited WSix using N2 plasma treatment

Journal of the Electrochemical Society

Volumn 146, Issue 4, 1999, Pages 1583-1592

  Wang, M T ^a   Lin, Y C ^a   Lee, J Y ^a   Wang, C C ^a   Chen, M C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DIFFUSION; INTERFACES (MATERIALS); NITROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; THERMODYNAMIC STABILITY;

BARRIER LAYER; TUNGSTEN SILICIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032644094     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391809     Document Type: Article

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