Influence of SiH2Cl2 on the kinetics of the chemical vapor deposition of tungsten by SiH4 reduction of WF6

Journal of the Electrochemical Society

Volumn 146, Issue 1, 1999, Pages 167-169

  Jongste, J F ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CHEMICAL VAPOR DEPOSITION; REACTION KINETICS; REDUCTION; SILANES; TUNGSTEN; TUNGSTEN COMPOUNDS;

DICHLOROSILANE; TUNGSTEN HEXAFLUORIDE;

METALLIC FILMS;

EID: 0032751986     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391581     Document Type: Article

References (3)

1. E. K. Broadbent and C. L. Ramiller, J. Electrochem. Soc., 131, 1427 (1984).
2. Y. Kusumoto, K. Takakuwa, H. Hashinokuchi, T. Ikuta, and I. Nakayama, in Tungsten and Other Refractory Metals for VLSI Applications III, V. A. Wells, Editor, p. 103, MRS, Pittsburgh, PA (1988).
3. C. A. van der Jeugd, G. J. Leusink, G. C. A. M. Janssen, and S. Radelaar, J. Appl. Phys., 70, 2353 (1991).