Properties of Low-Pressure CVD Tungsten Silicide for MOS VLSI Interconnections

IEEE Transactions on Electron Devices

Volumn 30, Issue 11, 1983, Pages 1497-1505

  Saraswat, Krishna C ^a   Brors, Daniel L ^b   Fair, James A ^b   Monnig, Kenneth A ^b   Beyers, Robert ^a  

^a STANFORD UNIVERSITY   (United States)

^b AIXTRON Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, VLSI; SEMICONDUCTOR DEVICES, MOS;

TUNGSTEN AND ALLOYS;

EID: 0020849910     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1983.21328     Document Type: Article

References (33)

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