High-speed modulation up to 10 Gbit/s with 1.55 μm wavelength InGaAlAs VCSELs

Electronics Letters

Volumn 38, Issue 20, 2002, Pages 1180-1181

  Ortsiefer, M ^a   Shau, R ^b   Mederer, F ^c   Michalzik, R ^c   Rosskopf, J ^a   Bohm G ^b   Kohler F ^b   Lauer, C ^b   Maute, M ^b   Amann, M C ^b  

^a VERTILAS GMBH   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

^c UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIT ERROR RATE; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; LIGHT EMISSION; LIGHT MODULATION; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS; THERMAL CONDUCTIVITY; THRESHOLD VOLTAGE;

BURIED TUNNEL JUNCTIONS; TELECOMMUNICATION WAVELENGTH; THRESHOLD CURRENTS; VERTICAL CAVITY SURFACE EMITTING LASER;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037179858     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020819     Document Type: Article

References (4)

1. Ramakrishnan, A., Steinle, G., Supper, D., Degen, C., and Ebbinghaus, G.: 'Electrically pumped 10 Gbit/s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region', Electron. Lett., 2002, 38, pp. 322-324
2. Shau, R., Ortsiefer, M., Rosskopf, J., Böhm, G., Köhler, F., and Amann, M.-C., 'Vertical-cavity surface-emitting laser diodes at 1.55 μm with large output power and high operation temperature', Electron. Lett., 2001, 37, pp. 1295-1296
3. Ortsiefer, M., Shau, R., Böhm, G., Köhler, F., Rosskopf, J., Steinle, G., Degen, C., and Amann, M.-C.: 'High-temperature 2.5 Gb/s vertical-cavity surface-emitting lasers at 1.55 μm wavelength'. 27th European Conf. on Optical Communication (ECOC), Amsterdam, The Netherlands, 2001, pp. 44-45 (Postdeadline paper)
4. Black, K.A., Bjorlin, E.S., Piprek, J., Hu, E.L., and Bowers, J.E.: 'Small-signal frequency response of long-wavelength vertical-cavity lasers', IEEE Photonics Technol. Lett., 2001, 13, pp. 1049-1051