Metalorganic molecular-beam epitaxy and characterization of GaAsNSe/GaAs superlattices emitting around 1.5-μm-wavelength region

Applied Physics Letters

Volumn 82, Issue 6, 2003, Pages 898-900

  Uesugi, K ^a   Suemune, I ^a   Machida, H ^b   Shimoyama, N ^b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b Trichemical Laboratory   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

WAVELENGTH REGION;

SEMICONDUCTOR SUPERLATTICES;

EID: 0037428753     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1544656     Document Type: Article

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