Chemical vapor deposition and photoluminescent properties of polycrystalline AlN films

Inorganic Materials

Volumn 42, Issue 6, 2006, Pages 627-631

  Red'kin, A N ^a   Gruzintsev, A N ^a   Makovei, Z I ^a   Tatsii, V I ^a   Yakimov, E E ^a  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33745029279     PISSN: 00201685     EISSN: 16083172     Source Type: Journal    
DOI: 10.1134/S0020168506060094     Document Type: Article

References (10)

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3. Guo, Q.X., Yahata, K., Tanaka, T., et al., Low-Temperature Growth of Aluminum Nitride on Sapphire Substrates, J. Cryst. Growth, 2003, vol. 257, pp. 123-128.
4. Edgar, J.H., Liu, L., Liu, B., et al., Bulk A1N Crystal Growth: Self-Seeding and Seeding on 6H-SiC Substrates, J. Cryst. Growth, 2002, vol. 246, pp. 187-193.
5. Raghothamachar, B., Dudley, M., Rojo, J.C., et al., X-ray Characterization of Bulk A1N Single Crystals Grown by the Sublimation Technique, J. Cryst. Growth, 2003, vol. 250, pp. 244-250.
6. Grekov, F.F., Demidov, D.M., and Kryakin, V.A., Reaction of Aluminum with Monoamminetrichloroaluminum, Zh. Prikl. Khim. (Leningrad), 1988, vol. 61, no. 2, pp. 249-254.
7. Gorodetsky, A.E., Zalavutdinov, R.Kh., Zakharov, A.P., et al., A1N Films Grown on Diamond and Silicon Carbide, Diamond Relat. Mater., 1999, vol. 8, pp. 1267-1271.
8. Red'kin, A.N., Tatsii, V.I., Makovei, Z.I., et al., Chemical Vapor Deposition of GaN from Gallium and Ammonium Chloride, Neorg. Mater., 2004, vol. 40, no. 10, pp. 1197-1202
9. [Inorg. Mater. (Engl. Transl.), vol. 40, no. 10, pp. 1049-1053].
10. Silvera, E., Freitas, J.A., Glembocki, O.J., et al., Excitonic Structure of Bulk A1N from Optical Reflectivity and Cathodoluminescence Measurements, Phys. Rev. B: Condens. Matter, 2005, vol. 71, no. 10, pp. 041201-041204.