Hydrogenation of Si from SiN x:H films: How much hydrogen is really in the Si?

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

Volumn A, Issue , 2003, Pages 909-912

  Stavola, Michael ^a   Jiang, Fan ^a   Rohatgi, A ^b   Kim, D ^b   Holt, J ^c   Atwater, H ^c   Kalejs, J ^d  

^a LEHIGH UNIVERSITY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c California Institute of Technology   (United States)

^d RWE POWER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BULK DEHYDROGENATION; DIFFUSION CONSTANT; MINORITY CARRIERS; VIBRATIONAL ABSORPTION;

ANNEALING; CHARACTERIZATION; DEFECTS; DEPOSITION; DIFFUSION; HYDROGENATION; IMPURITIES; PASSIVATION; SILICON NITRIDE;

THIN FILMS;

EID: 6444237466     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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