Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1327-1332

  Park, Jin Seong ^a   Kang, Sang Won ^a   Kim, H ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); COPPER; CRYSTAL GROWTH; DIFFUSION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SURFACE REACTIONS;

BARRIER PROPERTIES; INTERCONNECT TECHNOLOGY; PLASMA ENHANCED ATOMIC LAYER DEPOSITION; REACTANTS;

THIN FILMS;

EID: 33744931887     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2198846     Document Type: Article

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