Degradation of reactively sputtered Ti-Si-N films used as a barrier layer in titanium silicide/polycrystalline Si gate electrodes

Journal of the Electrochemical Society

Volumn 146, Issue 4, 1999, Pages 1579-1582

  Park, Ji Soo ^a   Sohn, Dong Kyun ^a   Lee, Byung Hak ^a   Bae, Jong Uk ^a   Byun, Jeong Soo ^a,b   Park, Jin Won ^a  

^a Hynix Semiconductor Inc   (South Korea)

^b NOVELLUS SYSTEMS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRIC PROPERTIES; ELECTRODES; NITROGEN; PHYSICAL PROPERTIES; POLYCRYSTALLINE MATERIALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS; TITANIUM COMPOUNDS; TITANIUM NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

BARRIER LAYER; TITANIUM SILICIDE;

SEMICONDUCTING FILMS;

EID: 0032641037     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391808     Document Type: Article

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