Influence of hydrogen plasma surface treatment of Si substrate on nickel silicide formation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1449-1454

  Vengurlekar, Aniruddha ^a,d   Balasubramanian, Satheesh ^a   Ashok, S ^a   Theodore, David ^b   Chi, Dongzhi ^c  

^a The Pennsylvania State University   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^d INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NICKEL SILICIDE (NISI); PROCESSING TEMPERATURES; SHEET RESISTANCE; SILICIDES;

HYDROGEN; HYDROGENATION; NICKEL COMPOUNDS; SUBSTRATES; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY;

SILICON;

EID: 33744901680     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2200373     Document Type: Article

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