Temperature dependence of TaSiN thin film resistivity from room temperature to 900°C

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 6 B, 2001, Pages

  Oizumi, M ^a   Aoki, K ^a   Fukuda, Y ^a  

^a Texas Instruments Japan Ltd   (Japan)

Author keywords

Amorphous; Barrier metal; Cu interconnects; Ferroelectric memory; Reactive sputtering; TaSiN

Indexed keywords

CHEMICAL ACTIVATION; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; SILICON WAFERS; SPUTTERING; TANTALUM COMPOUNDS; THERMAL EFFECTS;

THERMAL ACTIVATION; THIN FILM RESISTIVITY;

THIN FILMS;

EID: 0035874855     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l603     Document Type: Article

References (12)