|
Volumn 24, Issue 3, 2006, Pages 1532-1535
|
InAs/GaAs quantum-dot infrared photodetectors grown by molecular beam epitaxy
|
Author keywords
[No Author keywords available]
|
Indexed keywords
CURRENT-BLOCKING LAYER;
DOPANT IMPURITY;
DOT DENSITY;
PHOTORESPONSE SPECTRA;
DOPING (ADDITIVES);
IMPURITIES;
INFRARED DETECTORS;
MOLECULAR BEAM EPITAXY;
PHOTODETECTORS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM DOTS;
|
EID: 33744783402
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.2190675 Document Type: Article |
Times cited : (6)
|
References (17)
|