Electronic bistability in electrochemically self-assembled quantum dots: A potential nonvolatile random access memory

Applied Physics Letters

Volumn 76, Issue 4, 2000, Pages 460-462

  Kouklin, N ^a   Bandyopadhyay, S ^a   Tereshin, S ^b   Varfolomeev, A ^b   Zaretsky, D ^b  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b KURCHATOV INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001329864     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125787     Document Type: Article

References (7)

1. See, for example, D. AlMawlawi, N. Coombs, and M. Moskovitz, J. Appl. Phys. 70, 4421 (1991).
2. A. Balandin, S. Bandyopadhyay, P. G. Snyder, S. Stefanovich, A. Varfolomeev, D. Zaretsky, G. Banerjee, and A. E. Miller, Phys. Low-Dimens, Semicond. Struct. 11/12, 155 (1997).
3. S. Bandyopadhyay, A. H. Miller, H-C Chang, G. Banerjee, V. Yuzhakov, D.-F. Yue, R. E. Ricker, S. Jones, J. A. Eastman, E. Baugher, and M. Chandrasekhar, Nanotechnology 7, 360 (1996); CdS dots have been prepared in alumite templates by another group using a different electrodeposition technique, see D. Routkevich, T. Bigloni, M. Moskovitz, and J. M. Xu, J. Phys. Chem. 100, 14037 (1996).
4. S. Bandyopadhyay, A. H. Miller, H-C Chang, G. Banerjee, V. Yuzhakov, D.-F. Yue, R. E. Ricker, S. Jones, J. A. Eastman, E. Baugher, and M. Chandrasekhar, Nanotechnology 7, 360 (1996); CdS dots have been prepared in alumite templates by another group using a different electrodeposition technique, see D. Routkevich, T. Bigloni, M. Moskovitz, and J. M. Xu, J. Phys. Chem. 100, 14037 (1996).
5. S. R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968).
6. M. H. Cohen and H. Fritzche, Phys. Rev. Lett. 22, 1065 (1969).
7. K. F. Brennan, Appl. Phys. Lett. 57, 1114 (1990).