Amorphous silicon deposited by xenon ion beam assisted deposition

Journal of Non-Crystalline Solids

Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1016-1019

  Barbieri, P F ^a   de Oliveira Jr , M H ^a   Champi, A ^a   Marques, F C ^a  

^a UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

Amorphous semiconductors; Silicon

Indexed keywords

ENERGY ABSORPTION; ION BEAM ASSISTED DEPOSITION; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THIN FILMS; XENON;

AMORPHOUS SEMICONDUCTORS; COMPACTATION PROCESS; HEAVY ATOMS; SILICON TARGET;

AMORPHOUS SILICON;

EID: 33744551095     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.11.072     Document Type: Article

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