Irradiation induced defects in Si1-xGex: The effect of alloying

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 211, Issue 1, 2003, Pages 80-90

  Mesli, A ^a   Nylandsted Larsen, A ^b  

^a CNRS   (France)

^b AARHUS UNIVERSITY   (Denmark)

Author keywords

Deep levels; Defects; Irradiation; Si1 xGex

Indexed keywords

ANNEALING; ELECTRON EMISSION; ENTHALPY; IONIZATION; IRRADIATION; MECHANICAL ALLOYING; MOLECULAR DYNAMICS; POINT DEFECTS;

DEEP LEVELS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0041380826     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)01167-4     Document Type: Article

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