N-AlGaN/p-InGaN/n-GaN heterojunction bipolar transistors for high power operation

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 95-98

  Makimoto, T ^a   Kumakura, K ^a   Kobayashi, N ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM GALLIUM NITRIDE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ENERGY GAP; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; III-V SEMICONDUCTORS; INDIUM ALLOYS; NITRIDES; SEMICONDUCTOR ALLOYS; SILICON COMPOUNDS; TRANSISTORS;

BREAKDOWN ELECTRIC FIELD; COLLECTOR CURRENTS; COLLECTOR-EMITTER VOLTAGE; COMMON EMITTER; HIGH BREAKDOWN; HIGH-POWER OPERATION; IV CHARACTERISTICS; WIDE BAND GAP;

WIDE BAND GAP SEMICONDUCTORS;

EID: 4344644529     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390125     Document Type: Conference Paper

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