Site-specific dopant profiling in a scanning electron microscope using focused ion beam prepared specimens

Applied Physics Letters

Volumn 88, Issue 21, 2006, Pages

  Kazemian, P ^a   Twitchett, A C ^a   Humphreys, C J ^a   Rodenburg, C ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAMS; NANOTECHNOLOGY; POLISHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SILICON;

FOCUSED ION BEAM (FIB) MILLING; P-N JUNCTION; SITE-SPECIFIC DOPANT PROFILING; TRIPOD POLISHING;

SEMICONDUCTOR JUNCTIONS;

EID: 33744536865     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2207552     Document Type: Article

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