Defect mapping in full-size multi-crystalline Si wafers

EPJ Applied Physics

Volumn 27, Issue 1-3, 2004, Pages 55-58

  Ostapenko, S ^a   Romero, M ^b  

^a UNIVERSITY OF SOUTH FLORIDA   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; ELECTRONIC PROPERTIES; GERMANIUM; IMPURITIES; MAPPING; MICROSTRUCTURE; SCREENING; SOLAR CELLS;

DEFECT MAPPING; DEFECTS AND IMPURITIES IN CRYSTALS; DOPING IN GERMANIUM AND SILICON; ELEMENTAL SEMICONDUCTORS; IMPURITY IMPLANTATION IN GERMANIUM AND SILICON;

SILICON WAFERS;

EID: 10344238564     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2004042     Document Type: Conference Paper

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