Mapping of minority carrier diffusion length and heavy metal contamination with ultimate surface photovoltage method

EPJ Applied Physics

Volumn 27, Issue 1-3, 2004, Pages 503-506

  Lagowski, J ^a   Aleynikov, A ^a   Savtchouk, A ^a   Edelman, P ^a  

^a Semiconductor Diagnostics Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; DIFFUSION; FREQUENCIES; HEAVY METALS; IMPURITIES; IRON; MAPPING; MONOCHROMATORS; PHOTOCONDUCTIVITY; SILICON WAFERS; SURFACE TREATMENT;

CHARGE CARRIERS: GENERATION, RECOMBINATION, LIFETIME AND TRAPPING; PHOTOCONDUCTION AND PHOTOVOLTAIC EFFECTS; SEQUENTIAL ILLUMINATION; SURFACE PHOTOVOLTAGE (SPV);

CHARGE CARRIERS;

EID: 10244233007     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2004121     Document Type: Conference Paper

References (9)

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