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Volumn 26, Issue 2, 2003, Pages 71-79
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Direct growth of high-quality InP layers on GaAs substrates by MOCVD
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Author keywords
HEMT; LP MOCVD; Metamorphic buffer layer
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MORPHOLOGY;
OPTICAL MICROSCOPY;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING FILMS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR GROWTH;
SUBSTRATES;
SURFACE ROUGHNESS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION;
GALLIUM ARSENIDE SUBSTRATES;
HIGH CRYSTAL QUALITY;
METAMORPHIC BUFFER LAYER;
METAMORPHIC MICROWAVE DEVICE;
SEMICONDUCTING INDIUM PHOSPHIDE;
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EID: 0038206863
PISSN: 08827516
EISSN: None
Source Type: Journal
DOI: 10.1080/0882751031000073797 Document Type: Article |
Times cited : (12)
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References (4)
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