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Volumn 26, Issue 2, 2003, Pages 71-79

Direct growth of high-quality InP layers on GaAs substrates by MOCVD

Author keywords

HEMT; LP MOCVD; Metamorphic buffer layer

Indexed keywords

ATOMIC FORCE MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OPTICAL MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 0038206863     PISSN: 08827516     EISSN: None     Source Type: Journal    
DOI: 10.1080/0882751031000073797     Document Type: Article
Times cited : (12)

References (4)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.