Design and development of a MEMS capacitive bending strain sensor

Journal of Micromechanics and Microengineering

Volumn 16, Issue 5, 2006, Pages 935-942

  Aebersold, J ^a   Walsh, K ^a   Crain, M ^a   Martin, M ^a   Voor, M ^b   Lin, J T ^a   Jackson, D ^a   Hnat, W ^a   Naber, J ^a  

^a University of Louisville   (United States)

^b University of Louisville School of Medicine   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FAILURE ANALYSIS; FINITE ELEMENT METHOD; REACTIVE ION ETCHING; SENSORS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

DEEP REACTIVE ION ETCHING (DRIE); FOUR-POINT BENDING; MEMS-BASED CAPACITIVE BENDING STRAIN SENSOR;

MICROELECTROMECHANICAL DEVICES;

EID: 33744476154     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/16/5/009     Document Type: Article

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