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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3436-3441

Effect of surface treatment on the performance of vertical-structure GaN-based high-power light-emitting diodes with electroplated metallic substrates

(6) Uang, Kai Ming a Wang, Shui Jinn a Chen, Shiue Lung a Yang, Yu Cheng a Chen, Tron Min a Liou, Bor Wen b

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b WUFENG INSTITUTE OF TECHNOLOGY (Taiwan)

Author keywords

GaN; Patterned laser lift off; Power LEDs; Surface treatment; Vertical conducting

Indexed keywords

ELECTROPLATED PRODUCTS; ETCHING; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; SUBSTRATES; SURFACE TREATMENT;

CHEMICAL ETCHING; PATTERNED LASER LIFT-OFF; POWER LED; VERTICAL CONDUCTING;

LIGHT EMITTING DIODES;

EID: 33646925865 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.3436 Document Type: Article

Times cited : (28)

References (17)

1
- 0004167140
- Springer, Berlin
- H. Morkoc: Nitride Semiconductors and Devices (Springer, Berlin, 1999).
- (1999) Nitride Semiconductors and Devices
- Morkoc, H.¹

2
- 0033700984
- Y. Arakawa, T. Someya and K. Tachibana: IEICE Trans. Electron. E83-C (2000) 564.
- (2000) IEICE Trans. Electron. , vol.E83-C , pp. 564
- Arakawa, Y.¹ Someya, T.² Tachibana, K.³

3
- 0001521015
- H. X. Jiang, S. X. Jin, J. Li, J. Shakya and J. Y. Lin: Appl. Phys. Lett. 78 (2001) 1303.
- (2001) Appl. Phys. Lett. , vol.78 , pp. 1303
- Jiang, H.X.¹ Jin, S.X.² Li, J.³ Shakya, J.⁴ Lin, J.Y.⁵

4
- 1542315187
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars and S. Nakamura: Appl. Phys. Lett. 84 (2004) 855.
- (2004) Appl. Phys. Lett. , vol.84 , pp. 855
- Fujii, T.¹ Gao, Y.² Sharma, R.³ Hu, E.L.⁴ DenBaars, S.P.⁵ Nakamura, S.⁶

5
- 18644384611
- D. W. Kim, H. Y. Lee, M. C. Yoo and G. Y. Yeom: Appl. Phys. Lett. 86 (2005) 052108.
- (2005) Appl. Phys. Lett. , vol.86 , pp. 052108
- Kim, D.W.¹ Lee, H.Y.² Yoo, M.C.³ Yeom, G.Y.⁴

6
- 0035926908
- J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O'shea, M. J. Ludowise, G. Christenson, Y. C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Gotz, N. F. Gardner, R. S. Kern and S. A. Stockman: Appl. Phys. Lett. 78 (2001) 3379.
- (2001) Appl. Phys. Lett. , vol.78 , pp. 3379
- Wierer, J.J.¹ Steigerwald, D.A.² Krames, M.R.³ O'Shea, J.J.⁴ Ludowise, M.J.⁵ Christenson, G.⁶ Shen, Y.C.⁷ Lowery, C.⁸ Martin, P.S.⁹ Subramanya, S.¹⁰ Gotz, W.¹¹ Gardner, N.F.¹² Kern, R.S.¹³ Stockman, S.A.¹⁴

7
- 0032620758
- W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano and N. M. Johnson: Appl. Phys. Lett. 75 (1999) 1360.
- (1999) Appl. Phys. Lett. , vol.75 , pp. 1360
- Wong, W.S.¹ Sands, T.² Cheung, N.W.³ Kneissl, M.⁴ Bour, D.P.⁵ Mei, P.⁶ Romano, L.T.⁷ Johnson, N.M.⁸

8
- 22544446448
- S. J. Kim: Jpn. J. Appl. Phys. 44 (2005) 2921.
- (2005) Jpn. J. Appl. Phys. , vol.44 , pp. 2921
- Kim, S.J.¹

9
- 0036541566
- W. S. Wong, M. Kneissl, D. W. Treat, M. Teepe, N. Miyashita, A. Salleo and N. M. Johnson: J. Mater. Res. 17 (2002) 890.
- (2002) J. Mater. Res. , vol.17 , pp. 890
- Wong, W.S.¹ Kneissl, M.² Treat, D.W.³ Teepe, M.⁴ Miyashita, N.⁵ Salleo, A.⁶ Johnson, N.M.⁷

10
- 22544464991
- S. H. Huang, R. H. Horng, S. C. Hsu, T. Y. Chen and D. S. Wuu: Jpn. J. Appl. Phys. 44 (2005) 3028.
- (2005) Jpn. J. Appl. Phys. , vol.44 , pp. 3028
- Huang, S.H.¹ Horng, R.H.² Hsu, S.C.³ Chen, T.Y.⁴ Wuu, D.S.⁵

11
- 2342614846
- B. S. Tan, S. Yuan and X. J. Kang: Appl. Phys. Lett. 84 (2004) 2757.
- (2004) Appl. Phys. Lett. , vol.84 , pp. 2757
- Tan, B.S.¹ Yuan, S.² Kang, X.J.³

12
- 24144437205
- S. J. Wang, K. M. Uang, S. L. Chen, Y. C. Yang, S. C. Chang, T. M. Chen, C. H. Chen and B. W. Liou: Appl. Phys. Lett. 87 (2005) 011111.
- (2005) Appl. Phys. Lett. , vol.87 , pp. 011111
- Wang, S.J.¹ Uang, K.M.² Chen, S.L.³ Yang, Y.C.⁴ Chang, S.C.⁵ Chen, T.M.⁶ Chen, C.H.⁷ Liou, B.W.⁸

13
- 0026940274
- M. Ahmad and B. M. Arora: Solid-State Electron. 35 (1992) 1441.
- (1992) Solid-state Electron. , vol.35 , pp. 1441
- Ahmad, M.¹ Arora, B.M.²

14
- 3142637226
- Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. Denbaars, S. Nakamura and E. L. Hu: Jpn. J. Appl. Phys. 43 (2004) L637.
- (2004) Jpn. J. Appl. Phys. , vol.43
- Gao, Y.¹ Fujii, T.² Sharma, R.³ Fujito, K.⁴ Denbaars, S.P.⁵ Nakamura, S.⁶ Hu, E.L.⁷

15
- 0037029627
- S. Tripathy, S. J. Chua and A. Ramam: J. Phys.: Condens. Matter 14 (2002) 4461.
- (2002) J. Phys.: Condens. Matter , vol.14 , pp. 4461
- Tripathy, S.¹ Chua, S.J.² Ramam, A.³

16
- 2342517427
- A. Motayed, M. Jah, A. Sharma, W. T. Anderson, C. W. Litton and S. N. Mohammad: J. Vac. Sci. Technol. B 22 (2004) 663.
- (2004) J. Vac. Sci. Technol. B , vol.22 , pp. 663
- Motayed, A.¹ Jah, M.² Sharma, A.³ Anderson, W.T.⁴ Litton, C.W.⁵ Mohammad, S.N.⁶

17
- 33646948006
- T. Kuroda, A. Tackeuchi and T. Sota: Appl. Phys. Lett. 76 (2000)
- (2000) Appl. Phys. Lett. , vol.76
- Kuroda, T.¹ Tackeuchi, A.² Sota, T.³

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