Surface texturing for wafer-bonded vertical-type GaN/mirror/Si light-emitting diodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 5 A, 2005, Pages 3028-3031

  Huang, Shao Hua ^a   Horng, Ray Hua ^a   Hsu, Shun Cheng ^a   Chen, Tsung Yu ^b   Wuu, Dong Sing ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b Advanced Epitaxy Technology Inc   (Taiwan)

Author keywords

GaN; Laser lift off; Light emitting diode (LED); Surface texturing; Wafer bonding

Indexed keywords

CHEMICAL BONDS; ELECTRON BEAMS; ETCHING; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; LIGHT EMITTING DIODES; POTASSIUM COMPOUNDS; QUANTUM EFFICIENCY; SEMICONDUCTOR QUANTUM WELLS; SILICON WAFERS; SURFACE ROUGHNESS; TEXTURES;

GAN; LASER LIFT-OFF; SURFACE TEXTURING; WAFER BONDING;

SURFACE PHENOMENA;

EID: 22544464991     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.3028     Document Type: Article

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