Structural properties of Bi-terminated GaAs(0 0 1) surface

Surface Science

Volumn 600, Issue 11, 2006, Pages 2349-2354

  Ahola Tuomi, M ^a   Laukkanen, P ^a   Perala R E ^a   Kuzmin, M ^a,c   Pakarinen, J ^a   Vayrynen I J ^a   Adell, M ^b  

^a UNIVERSITY OF TURKU   (Finland)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

Bismuth; Gallium arsenide; Scanning tunneling microscopy; Single crystal surfaces; Surface reconstruction; Synchrotron radiation photoelectron spectroscopy

Indexed keywords

BISMUTH; DIMERS; ELECTRONIC STRUCTURE; PHOTOEMISSION; SCANNING TUNNELING MICROSCOPY; SENSITIVITY ANALYSIS; SINGLE CRYSTALS;

GALLIUM ARSENIDE; SINGLE CRYSTAL SURFACES; SURFACE RECONSTRUCTION; SYNCHROTRON RADIATION PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33646909129     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.03.033     Document Type: Article

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