Electronic and structural properties of GaAs(100)(2x4) and InAs(100)(2x4) surfaces studied by core-level photoemission and scanning tunneling microscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 4, 2005, Pages

  Laukkanen, P ^a   Kuzmin, M ^a,e   Perala R E ^a   Ahola, M ^a   Mattila, S ^a   Vayrynen I J ^a   Sadowski, J ^b,c   Konttinen, J ^d   Jouhti, T ^d   Peng, C S ^d   Saarinen, M ^d   Pessa, M ^d  

^a UNIVERSITY OF TURKU   (Finland)

^b LUND UNIVERSITY   (Sweden)

^c INSTITUTE OF PHYSICS   (Poland)

^d TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^e IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33749233666     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.045321     Document Type: Article

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