Down-conversion properties of luminescent silicon nanostructures formed and passivated in HNO3-based solutions

Thin Solid Films

Volumn 511-512, Issue , 2006, Pages 473-477

  Gonzalez Diaz B ^a   Guerrero Lemus, R ^a   Haro Gonzalez P ^a   Borchert, D ^b   Hernandez Rodriguez C ^a  

^a UNIVERSIDAD DE LA LAGUNA   (Spain)

^b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS   (Germany)

Author keywords

Down conversion; Lifetime; Nanostructures; Photoluminescene; Silicon; Stain etching

Indexed keywords

CHEMICAL BONDS; FOURIER TRANSFORMS; MICROWAVE DEVICES; NITRIC ACID; PASSIVATION; PHOTOCONDUCTING DEVICES; PHOTOLUMINESCENCE; POROUS MATERIALS; SILICON; SPECTROGRAPHS;

DOWN-CONVERSION; SPECTROFLUOROMETRY; STAIN ETCHING;

NANOSTRUCTURED MATERIALS;

EID: 33646754015     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.12.129     Document Type: Article

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