Optical and structural properties of CVD-grown single crystal SiO 2 using optically detected XAS

Applied Surface Science

Volumn 244, Issue 1-4, 2005, Pages 318-321

  Nakamura, T ^a   Takahashi, N ^a   Poolton, N R J ^b   Malins, A E R ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b DARESBURY LABORATORY   (United Kingdom)

Author keywords

CVD; Luminescence; OD XAS; Quartz

Indexed keywords

BINDING ENERGY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; LUMINESCENCE; OPTICAL PROPERTIES; QUARTZ; QUENCHING; SINGLE CRYSTALS; SYNCHROTRON RADIATION; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

EXCITONIC ABSORPTION; LUMINESCENCE EXCITATION SPECTRA; SELF-TRAPPING EXCITON (STE); STRUCTURAL PROPERTIES;

SILICA;

EID: 15844362332     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.10.084     Document Type: Conference Paper

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