Nitrogen-induced hindering of in incorporation in InGaAsN

Applied Physics Letters

Volumn 88, Issue 14, 2006, Pages

  Rubini, S ^c   Bais, G ^a   Cristofoli, A ^a   Piccin, M ^a   Duca, R ^a   Nacci, C ^c   Modesti, S ^a   Carlino, E ^c   Martelli, F ^c   Franciosi, A ^c   Bisognin, G ^b   De Salvador, D ^b   Schiavuta, P ^b   Berti, M ^b   Drigo, A V ^b  

^a UNIVERSITY OF TRIESTE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM; MOLECULAR BEAM EPITAXY; NITROGEN; REDUCTION; TERNARY SYSTEMS;

NITROGEN CONTENT; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 33646710168     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2193988     Document Type: Article

References (13)

1. M. Kondow, T. Kitani, K. Nakahara, and T. Tanaka, Jpn. J. Appl. Phys. 35, 1273 (1996).
2. G. Bais, A. Cristofoli, F. Jabeen, M. Piccin, E. Carlino, S. Rubini, F. Martelli, and A. Franciosi, Appl. Phys. Lett. 86, 233107 (2005).
3. G. Bisognin, D. De Salvador, C. Mattevi, M. Berti, A. V. Drigo, G. Ciatto, L. Grenouillet, P. Duvaut, P. Gilet, and H. Mariette, J. Appl. Phys. 95, 48 (2004).
4. R. Duca, G. Ceballos, C. Nacci, D. Furlanetto, P. Finetti, S. Modesti, A. Cristofoli, G. Bais, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi, Phys. Rev. B 72, 075311 (2005).
5. J. W. Steeds and E. Carlino, in Proceedings of the International School on Electron Microscopy in Materials Science, edited by, P. G. Merli, and, M. Vittori Antisari, (World Scientific, Singapore, 1992), p. 279.
6. E. Carlino and V. Grillo, Phys. Rev. B 71, 235303 (2005).
7. J. I. Goldstein, D. B. Williams, and G. Cliff, in Principles of Analytical Electron Microscopy, 2nd ed., edited by, D. J. Joi, A. D. Romig, Jr., and, J. I. Goldstein, (Plenum, New York, 1989), p. 155.
8. C. Marinelli, L. Sorba, M. Lazzarino, D. Kumar, E. Pelucchi, B. H. Müller, D. Orani, S. Rubini, A. Franciosi, S. De Franceschi, and F. Beltram, J. Vac. Sci. Technol. B 18, 2119 (2000). The paper contains a detailed description of the fit procedure.
9. D. Serries, T. Geppert, P. Ganser, M. Maier, K. Köhler, N. Herres, and J. Wagner, Appl. Phys. Lett. 80, 2448 (2002).
10. J. C. Harmand, G. Ungaro, L. Largeau, and G. Le Roux, Appl. Phys. Lett. 77, 2482 (2000).
11. D. Livtinov, D. Gerthsen, A. Rosenhauer, M. Hetterich, A. Grau, Ph. Gilet, and L. Grenouillet, Appl. Phys. Lett. 85, 3743 (2004).
12. W. A. Harrison, Electronic Structure and the Properties of Solids (Dover, New York, 1989), p. 176.
13. T. H. Chiu and N. G. Chu, Appl. Phys. Lett. 57, 1425 (1990).