Photoreflectance investigation of InAs quantum dashes embedded in In 0.53Ga0.47AsIn0.53Ga0.23Al 0.24As quantum well grown on InP substrate

Applied Physics Letters

Volumn 88, Issue 14, 2006, Pages

  Rudno Rudzinski W ^a   Kudrawiec, R ^a   Sek G ^a   Misiewicz, J ^a   Somers, A ^b   Schwertberger, R ^b   Reithmaier, J P ^b   Forchel, A ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOREFRACTIVE MATERIALS; RESONANCE; SEMICONDUCTOR QUANTUM WELLS;

MASS APPROXIMATION; OPTICAL TRANSITIONS; PHOTOREFLECTANCE; QUANTUM DASHES;

QUANTUM ELECTRONICS;

EID: 33646704030     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2187496     Document Type: Article

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