Large internal quantum efficiency of In-free UV-emitting GaN/AlGaN quantum-well structures

Applied Physics Letters

Volumn 88, Issue 19, 2006, Pages

  Fuhrmann, D ^a   Retzlaff, T ^a   Rossow, U ^a   Bremers, H ^a   Hangleiter, A ^a   Ade, G ^b   Hinze, P ^b  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; LIGHT EMISSION; QUANTUM EFFICIENCY; RESONANCE; ULTRAVIOLET RADIATION;

DEFECT DENSITY; EXCITATION POWER; GAINN-BASED LIGHT EMITTERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33646699081     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2202109     Document Type: Article

References (16)

1. V. Adivarahan, W. H. Sun, A. Vhitnis, M. Shatalov, S. Wu, H. P. Maruska, and M. Asif Khan, Appl. Phys. Lett. 85, 2175 (2004).
2. D. Morita, M. Yamamoto, K. Akaishi, K. Matoba, K. Yasutomo, Y. Kasai, M. Sano, S.-I. Nagahama, and T. Mukai, Jpn. J. Appl. Phys., Part 1 43, 5945 (2004).
3. H. Hirayama, K. Akita, T. Kyono, T. Nakamura, and K. Ishibashi, Jpn. J. Appl. Phys., Part 2 43, L1241 (2004).
4. W. Sun, V. Adivarahan, M. Shatalov, Y. Lee, S. Wu, J. Yang, J. Zhang, and M. A. Khan, Jpn. J. Appl. Phys., Part 2 43, L1419 (2004).
5. S. Nakamura, M. Senoh, N. Iwasa, and S.-I. Nagahama, Appl. Phys. Lett. 67, 1868 (1995).
6. A. Hangleiter, D. Fuhrmann, M. Greve, F. Hitzel, G. Klewer, S. Lahmann, C. Netzel, N. Riedel, and U. Rossow, Phys. Status Solidi A 201, 2808 (2004).
7. T. Mukai, M. Yamada, and S. Nakamura, Jpn. J. Appl. Phys., Part 1 38, 3976 (1999).
8. D. Fuhrmann, C. Netzel, U. Rossow, A. Hangleiter, G. Ade, and P. Hinze, Appl. Phys. Lett. 88, 071105 (2006).
9. S. Chichibua, T. Azuhata, T. Sota, and S. Nakamura, Appl. Phys. Lett. 27, 4188 (1996).
10. Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, and S. Nakamura, Appl. Phys. Lett. 70, 981 (1997).
11. T. M. Smeeton, M. J. Kappers, J. S. Barnard, M. E. Vickers, and C. J. Humphreys, Appl. Phys. Lett. 83, 5419 (2003).
12. A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, Phys. Rev. Lett. 95, 127402 (2005).
13. V. Fiorentini, F. Bernardini, and O. Ambacher, Appl. Phys. Lett. 80, 1204 (2002).
14. S. Lahmann, F. Hitzel, U. Rossow, and A. Hangleiter, Phys. Status Solidi C 0, 2202 (2003).
15. D. Fuhrmann, C. Netzel, U. Rossow, H. Bremers, A. Hangleiter, G. Ade, and P. Hinze, Phys. Status Solidi A (in press).
16. H. Hirayama, K. Akita, T. Tyono, T. Nakamura, and K. Ishibashi, Sixth International Conference on Nitride Semiconductors, Bremen, 2005.