Bowing of epitaxial layers grown on bulk GaN substrates

Physica Status Solidi C: Conferences

Volumn 2, Issue 4, 2005, Pages 1259-1264

  Sarzynski M ^a,b   Krysko M ^a   Czernecki, R ^a   Targowski, G ^a   LUcznik B ^a   Kamler, G ^a   Domagala J ^c   Grzegory, I ^a   Leszczynski M ^a   Porowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ELASTICITY; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; PRESSURE EFFECTS; RELAXATION PROCESSES; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

GAN SUBSTRATES; HYDRIDE VAPOR PHASE EPITAXY (HVPE); LATTICE-MISMATCH;

GALLIUM NITRIDE;

EID: 27344453829     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200460422     Document Type: Conference Paper

References (12)

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