SiSiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance

Applied Physics Letters

Volumn 88, Issue 19, 2006, Pages

  Shi, J W ^a   Chiu, P H ^a   Huang, F H ^a   Wu, Y S ^a   Lu, Ja Yu ^c   Sun, C K ^c   Liu, C W ^c   Chen, P S ^b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; AVALANCHE DIODES; BANDWIDTH; OPTIMIZATION; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS;

EDGE-COUPLED PHOTODIODES; HIGH-POWER PERFORMANCE; PHOTOABSORPTION;

PHOTODIODES;

EID: 33646681190     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2202101     Document Type: Article

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