Alteration of internal stresses in SiO2/Cu/TiN thin films by X-ray and synchrotron radiation due to heat treatment

Vacuum

Volumn 80, Issue 7 SPEC. ISS., 2006, Pages 836-839

  Matsue, Tatsuya ^a   Hanabusa, Takao ^b   Ikeuchi, Yasukazu ^a   Kusaka, Kazuya ^b   Sakata, Osami ^c  

^a NIIHAMA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF TOKUSHIMA   (Japan)

^c JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

Crystal structure; Multi layers film; Residual stress; Surface morphology; Synchrotron radiation; X ray diffraction

Indexed keywords

CRYSTAL STRUCTURE; GLASS; RESIDUAL STRESSES; SILICA; SURFACES; SYNCHROTRON RADIATION; TITANIUM NITRIDE; X RAY DIFFRACTION;

ARC ION PLATING; GLASS SUBSTRATES; MULTI LAYERS FILM; TENSILE RESIDUAL STRESSES;

THIN FILMS;

EID: 33646553916     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2005.11.033     Document Type: Article

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