Cathodoluminescence and epitaxy after laser annealing of Cs + -irradiated α-quartz

Applied Surface Science

Volumn 252, Issue 13 SPEC. ISS., 2006, Pages 4477-4480

  Sahoo, P K ^a   Gasiorek, S ^a   Dhar, S ^a   Lieb, K P ^a   Schaaf, P ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

Epitaxy; Excimer laser annealing; Ion implantation; Quartz

Indexed keywords

ANNEALING; BACKSCATTERING; CATHODOLUMINESCENCE; CESIUM; ELECTROMAGNETIC WAVE EMISSION; EPITAXIAL GROWTH; ION IMPLANTATION; IRRADIATION; LASER THEORY; OPTICAL PROPERTIES; QUARTZ;

EMISSION BANDS; EXCIMER LASER ANNEALING; PHOTON ENERGY; RUTHERFORD BACKSCATTERING CHANNELLING ANALYSIS;

POSITIVE IONS;

EID: 33646540135     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.07.128     Document Type: Article

References (33)

1. Roma G., Limoge Y., and Baroni S. Phys. Rev. Lett. 86 (2001) 4564
2. Chabal Y.J. In: Chabal Y.J. (Ed). Fundamental Aspects of Silicon Oxidation (2001), Springer-Verlag, Berlin Heidelberg
3. Dhar S., Bolse W., and Lieb K.P. J. Appl. Phys. 85 (1999) 3120
4. Dhar S., Gasiorek S., Sahoo P.K., Vetter U., Hofsäß H., Kulkarni V.N., and Lieb K.P. Appl. Phys. Lett. 85 (2004) 1341
5. Dhar S., Gasiorek S., Sahoo P.K., Vetter U., Hofsäß H., Kulkarni V.N., and Lieb K.P. J. Appl. Phys. 97 (2005) 014910
6. Sahoo P.K., Dhar S., Gasiorek S., and Lieb K.P. Nucl. Instrum. Methods B 216 (2004) 324
7. Sahoo P.K., Dhar S., Gasiorek S., and Lieb K.P. J. Appl. Phys. 96 (2004) 1392
8. Roccaforte F., Bolse W., and Lieb K.P. Appl. Phys. Lett. 73 (1998) 1349
9. Roccaforte F., Bolse W., and Lieb K.P. J. Appl. Phys. 89 (2001) 3611
10. Gasiorek S., Dhar S., Keinonen J., Lieb K.P., and Sajavaara T. Nucl. Instrum. Methods B 216 (2004) 62
11. Gasiorek S., Dhar S., Keinonen J., Lieb K.P., and Sajavaara T. J. Appl. Phys. 95 (2004) 4705
12. Sahoo P.K., Gasiorek S., and Lieb K.P. Appl. Phys. Lett. 87 (2005) 021105
13. Gustafsson M., Roccaforte F., Keinonen J., Bolse W., Ziegler L., and Lieb K.P. Phys. Rev. B 61 (2000) 3327
14. Deng C., Sigmon T.W., Giust G.K., Wu J.C., and Wybourne M.N. J. Vac. Sci. Technol. A 14 (1996) 1860
15. Kamins T.I., Lee K.F., and Gibons J.F. Appl. Phys. Lett. 36 (1980) 550
16. Thompson M.O., Galvin G.J., Mayer J.W., Peercy P.S., Poate J.M., Jacobson D.C., Cullis A.G., and Chew N.G. Phys. Rev. Lett. 52 (1984) 2360
17. Hatano M., Moon S., Lee M., Suzuki K., and Grigoropoulos C.P. J. Appl. Phys. 87 (2000) 36
18. Nickel N.H. Laser crystallization of silicon. In: Willardson R.K., and Weber E.R. (Eds). Semiconductors and Semimetals vol. 75 (2003), Elsevier
19. Stiffler S.R., Thompson M.O., and Peercy P.S. Appl. Phys. Lett. 56 (1990) 1025
20. Gasiorek S., Dhar S., Lieb K.P., and Schaaf P. Appl. Surf. Sci. 247 (2005) 396
21. Ziegler J.F., and Biersack J.P. Computer Program SRIM (2000)
22. Uhrmacher M., Pampus K., Bergmeister F.J., Purschke D., and Lieb K.P. Nucl. Instrum. Methods B 9 (1985) 234
23. Stevens-Kalceff M.A., and Philips M.R. Phys. Rev. B 52 (1995) 3122
24. Steven Kalceff M.A. Phys. Rev. B 57 (1998) 5674
25. Skuja L. J. Non-Cryst. Solids 239 (1998) 16
26. Skuja L.N., and Entzian W. Phys. Status Solidi A 96 (1986) 191
27. von Borany J., Grötzschel R., Heinig K.H., Markwitz A., Matz W., Schmidt B., and Skorupa W. Appl. Phys. Lett. 71 (1997) 3215
28. Rebohle L., von Borany J., Yankov R.A., Skorupa W., Tyschenko I.E., Förb H., and Leo K. Appl. Phys. Lett. 77 (2000) 969
29. Fitting H.-J., Barfels T., Trukhin A.N., Schmidt B., Gulans A., and von Czarnowski A. J. Non-Cryst. Solids 303 (2002) 218
30. Klimenkov M., von Borany J., Matz W., Grötzschel R., and Herrmann F. J. Appl. Phys. 91 (2002) 10062
31. S. Gasiorek, P.K. Sahoo, S. Dhar, K.P. Lieb, T. Sajavaara, J. Keinonen, Appl. Phys. A, submitted for publication.
32. K.P. Lieb, P.K. Sahoo, S. Gasiorek, S. Dhar, Nucl. Instrum. Methods B, in press.
33. Doolittle L.R. Nucl. Instrum. Methods B 15 (1986) 227