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Volumn 247, Issue 1-4, 2005, Pages 396-400

Laser-induced epitaxial recrystallization after alkali-ion implantion into α-quartz

Author keywords

Epitaxy; Excimer laser irradiation; Ion implantation; Quartz

Indexed keywords

ACTIVATION ENERGY; AMORPHIZATION; DIFFUSION; EPITAXIAL GROWTH; EXCIMER LASERS; LASER BEAM EFFECTS; PHOTONS; QUARTZ; RECRYSTALLIZATION (METALLURGY); RUTHERFORD BACKSCATTERING SPECTROSCOPY;

EID: 19744372138     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.01.045     Document Type: Article
Times cited : (14)

References (30)
  • 16
    • 19744371277 scopus 로고    scopus 로고
    • Semiconductors and semimetals
    • R.K. Willardson E.R. Weber Elsevier
    • N.H. Nickel Semiconductors and semimetals R.K. Willardson E.R. Weber Laser Crystallization of Silicon 75 2003 Elsevier
    • (2003) Laser Crystallization of Silicon , vol.75
    • Nickel, N.H.1
  • 28
    • 19744377461 scopus 로고    scopus 로고
    • PhD Thesis, Amorphisierung von α-SiC durch Ionenbestrahlung, Göttingen
    • J. Conrad, Program DAMAGE, PhD Thesis, Amorphisierung von α-SiC durch Ionenbestrahlung, Göttingen, 1996.
    • (1996) Program DAMAGE
    • Conrad, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.