Cathodoluminescence of Ge+, Si+, and O+ implanted SiO2 layers and the role of mobile oxygen in defect transformations

Journal of Non-Crystalline Solids

Volumn 303, Issue 2, 2002, Pages 218-231

  Fitting, H J ^a   Barfels, T ^a   Trukhin, A N ^b   Schmidt, B ^c   Gulans, A ^b   Von Czarnowski, A ^a  

^a UNIVERSITY OF ROSTOCK   (Germany)

^b UNIVERSITY OF LATVIA   (Latvia)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CATHODOLUMINESCENCE; DIFFERENTIAL EQUATIONS; ION IMPLANTATION; OXYGEN; POSITIVE IONS; RADIATION EFFECTS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

DEFECT TRANSFORMATIONS;

SILICA;

EID: 0036569091     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(02)00952-3     Document Type: Article

References (35)