Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 3, 2001, Pages 615-621

  Choi, K J ^a   Lee, J L ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHARGE CARRIERS; CHEMISORPTION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC BREAKDOWN; FERMI LEVEL; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; HOLE TRAPS; HYSTERESIS; MOLECULAR BEAM EPITAXY; POINT DEFECTS; REACTIVE ION ETCHING; SURFACE TREATMENT;

SURFACE STATES;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0035326449     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1368679     Document Type: Conference Paper

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