Deep level defect in Si-implanted GaN n+-p junction

Applied Physics Letters

Volumn 82, Issue 21, 2003, Pages 3671-3673

  Chen, X D ^a   Huang, Y ^a   Fung, S ^a   Beling, C D ^a   Ling, C C ^a   Sheu, J K ^b   Lee, M L ^b   Chi, G C ^b   Chang, S J ^c  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; HOLE MOBILITY; ION IMPLANTATION; METALLORGANIC VAPOR PHASE EPITAXY; RAPID THERMAL ANNEALING; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM DOTS; SILICON;

DEPLETION LAYERS;

GALLIUM NITRIDE;

EID: 0038306938     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1578167     Document Type: Article

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