-
1
-
-
33646410548
-
A unified predictive TFT model with capability for statistical simulation
-
Singh, J., Zhang, S., Wang, H., Chan, M.: A unified predictive TFT model with capability for statistical simulation. Proc. Int. Semicond. Dev. Research Symp. (2001) 657-660.
-
(2001)
Proc. Int. Semicond. Dev. Research Symp.
, pp. 657-660
-
-
Singh, J.1
Zhang, S.2
Wang, H.3
Chan, M.4
-
2
-
-
0346076626
-
Poly-Si TPTs with asymmetric dual-gate for kink current reduction
-
Lee, M.-C., Han, M.-K.: Poly-Si TPTs with asymmetric dual-gate for kink current reduction. IEEE Elec. Dev. Lett. 25 (2004) 25-27.
-
(2004)
IEEE Elec. Dev. Lett.
, vol.25
, pp. 25-27
-
-
Lee, M.-C.1
Han, M.-K.2
-
3
-
-
0031164162
-
Numerical simulation of transient emission from deep level traps in polysilicon thin film transistors
-
Armstrong, G. A., Ayres, J. R., Brotherton, S. D.: Numerical simulation of transient emission from deep level traps in polysilicon thin film transistors. Solid-State Elec. 41 (1997) 835-84.
-
(1997)
Solid-state Elec.
, vol.41
, pp. 835-884
-
-
Armstrong, G.A.1
Ayres, J.R.2
Brotherton, S.D.3
-
6
-
-
10644240904
-
Effects of grain boundaries, field-dependent mobility, and interface trap states on the electrical characteristics of pentacene TFT
-
Bolognesi, A., Berliocchi, M., Manenti, M., Carlo, A. Di, Lugli, P., Lmimouni, K., Dufour, C.: Effects of grain boundaries, field-dependent mobility, and interface trap states on the electrical characteristics of pentacene TFT. IEEE Trans. Elec. Dev. 51 (2004) 1997-2003.
-
(2004)
IEEE Trans. Elec. Dev.
, vol.51
, pp. 1997-2003
-
-
Bolognesi, A.1
Berliocchi, M.2
Manenti, M.3
Di Carlo, A.4
Lugli, P.5
Lmimouni, K.6
Dufour, C.7
-
7
-
-
0036683918
-
The effects of grain boundaries in the electrical characteristics of large grain polycrystalline thin-film transistors
-
Chan, V. W., Chan, P.C.H., Yin, C.: The effects of grain boundaries in the electrical characteristics of large grain polycrystalline thin-film transistors. IEEE Trans. Elec. Dev. 49 (2002) 1384-1391.
-
(2002)
IEEE Trans. Elec. Dev.
, vol.49
, pp. 1384-1391
-
-
Chan, V.W.1
Chan, P.C.H.2
Yin, C.3
-
8
-
-
11044221347
-
A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation
-
Li, Y., Yu, S.-M.: A Parallel Adaptive Finite Volume Method for Nanoscale Double-gate MOSFETs Simulation. J. Comput. Appl. Math. 175 (2005) 87-99.
-
(2005)
J. Comput. Appl. Math.
, vol.175
, pp. 87-99
-
-
Li, Y.1
Yu, S.-M.2
-
9
-
-
0037810872
-
A parallel monotone iterative method for the numerical solution of multidimensional semiconductor poisson equation
-
Li, Y.: A Parallel Monotone Iterative Method for the Numerical Solution of Multidimensional Semiconductor Poisson Equation. Comput. Phys. Commun. 153 (2003) 359-372.
-
(2003)
Comput. Phys. Commun.
, vol.153
, pp. 359-372
-
-
Li, Y.1
-
10
-
-
6344239050
-
A unified mobility model for excimer laser annealed complementary thin film transistors simulation
-
Lin, H.-Y., Li, Y., Lee, J.-W., Chiu, C.-M., Sze, S. M.:A Unified Mobility Model for Excimer Laser Annealed Complementary Thin Film Transistors Simulation. Tech. Proc. Nanotech. Conf. 2 (2004) 13-16.
-
(2004)
Tech. Proc. Nanotech. Conf.
, vol.2
, pp. 13-16
-
-
Lin, H.-Y.1
Li, Y.2
Lee, J.-W.3
Chiu, C.-M.4
Sze, S.M.5
|