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Volumn 3726 LNCS, Issue , 2005, Pages 829-838

Application of parallel adaptive computing technique to polysilicon thin-film transistor simulation

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; COMPUTER OPERATING SYSTEMS; COMPUTER SIMULATION; GRAIN BOUNDARIES; PARALLEL PROCESSING SYSTEMS; POLYSILICON; THIN FILM TRANSISTORS;

EID: 33646399416     PISSN: 03029743     EISSN: 16113349     Source Type: Book Series    
DOI: 10.1007/11557654_93     Document Type: Conference Paper
Times cited : (1)

References (10)
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    • Poly-Si TPTs with asymmetric dual-gate for kink current reduction
    • Lee, M.-C., Han, M.-K.: Poly-Si TPTs with asymmetric dual-gate for kink current reduction. IEEE Elec. Dev. Lett. 25 (2004) 25-27.
    • (2004) IEEE Elec. Dev. Lett. , vol.25 , pp. 25-27
    • Lee, M.-C.1    Han, M.-K.2
  • 3
    • 0031164162 scopus 로고    scopus 로고
    • Numerical simulation of transient emission from deep level traps in polysilicon thin film transistors
    • Armstrong, G. A., Ayres, J. R., Brotherton, S. D.: Numerical simulation of transient emission from deep level traps in polysilicon thin film transistors. Solid-State Elec. 41 (1997) 835-84.
    • (1997) Solid-state Elec. , vol.41 , pp. 835-884
    • Armstrong, G.A.1    Ayres, J.R.2    Brotherton, S.D.3
  • 6
    • 10644240904 scopus 로고    scopus 로고
    • Effects of grain boundaries, field-dependent mobility, and interface trap states on the electrical characteristics of pentacene TFT
    • Bolognesi, A., Berliocchi, M., Manenti, M., Carlo, A. Di, Lugli, P., Lmimouni, K., Dufour, C.: Effects of grain boundaries, field-dependent mobility, and interface trap states on the electrical characteristics of pentacene TFT. IEEE Trans. Elec. Dev. 51 (2004) 1997-2003.
    • (2004) IEEE Trans. Elec. Dev. , vol.51 , pp. 1997-2003
    • Bolognesi, A.1    Berliocchi, M.2    Manenti, M.3    Di Carlo, A.4    Lugli, P.5    Lmimouni, K.6    Dufour, C.7
  • 7
    • 0036683918 scopus 로고    scopus 로고
    • The effects of grain boundaries in the electrical characteristics of large grain polycrystalline thin-film transistors
    • Chan, V. W., Chan, P.C.H., Yin, C.: The effects of grain boundaries in the electrical characteristics of large grain polycrystalline thin-film transistors. IEEE Trans. Elec. Dev. 49 (2002) 1384-1391.
    • (2002) IEEE Trans. Elec. Dev. , vol.49 , pp. 1384-1391
    • Chan, V.W.1    Chan, P.C.H.2    Yin, C.3
  • 8
    • 11044221347 scopus 로고    scopus 로고
    • A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation
    • Li, Y., Yu, S.-M.: A Parallel Adaptive Finite Volume Method for Nanoscale Double-gate MOSFETs Simulation. J. Comput. Appl. Math. 175 (2005) 87-99.
    • (2005) J. Comput. Appl. Math. , vol.175 , pp. 87-99
    • Li, Y.1    Yu, S.-M.2
  • 9
    • 0037810872 scopus 로고    scopus 로고
    • A parallel monotone iterative method for the numerical solution of multidimensional semiconductor poisson equation
    • Li, Y.: A Parallel Monotone Iterative Method for the Numerical Solution of Multidimensional Semiconductor Poisson Equation. Comput. Phys. Commun. 153 (2003) 359-372.
    • (2003) Comput. Phys. Commun. , vol.153 , pp. 359-372
    • Li, Y.1
  • 10
    • 6344239050 scopus 로고    scopus 로고
    • A unified mobility model for excimer laser annealed complementary thin film transistors simulation
    • Lin, H.-Y., Li, Y., Lee, J.-W., Chiu, C.-M., Sze, S. M.:A Unified Mobility Model for Excimer Laser Annealed Complementary Thin Film Transistors Simulation. Tech. Proc. Nanotech. Conf. 2 (2004) 13-16.
    • (2004) Tech. Proc. Nanotech. Conf. , vol.2 , pp. 13-16
    • Lin, H.-Y.1    Li, Y.2    Lee, J.-W.3    Chiu, C.-M.4    Sze, S.M.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.