A unified mobility model for excimer laser annealed complementary thin film transistors simulation

2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004

Volumn 2, Issue , 2004, Pages 13-16

  Lin, Hsiao Yi ^a   Li, Yiming ^b,c,d   Lee, Jam Wem ^b   Chiu, Chaung Ming ^a   Sze, S M ^b,c  

^a InnoLux Display Corporation   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d National Nano Device Laboratories ^*  (Taiwan)

Author keywords

Complementary TFT mode; Excimer laser annealed; Gate induced mobility degradation; LTPS; SPICE mobility model

Indexed keywords

ANNEALING; CONVERGENCE OF NUMERICAL METHODS; LIQUID CRYSTAL DISPLAYS; MATHEMATICAL MODELS; MOSFET DEVICES; POLYCRYSTALLINE MATERIALS; THIN FILM TRANSISTORS;

ACTIVE MATRIX LIQUID CRYSTAL DISPLAYS (AMLCD); EXCIMER LASER ANNEALED; GATE INDUCED MOBILITY;

EXCIMER LASERS;

EID: 6344239050     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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5. G.-Y. Yang et al., :S-TFT: an analytical model of polysilicon thin-film transistors for circuit simulation," Proceedings of the IEEE Custom Integrated Circuits Conference, 213, 2000.
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7. G. A. Armstrong et al., "Modeling of Laser-Annealed Polysilicon TFT Characteristics," IEEE Electron Device Letters 18, 315, 1997.